G3R12MT12K
1200V 12M TO-247-4 G3R SIC MOSFEManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor G3R12MT12K is a high-performance N-Channel Silicon Carbide (SiC) MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 157 A at 25°C, with a high power dissipation capability of 567 W at the same temperature. The G3R12MT12K offers a low on-resistance (Rds On) of 13 mOhm at 100 A and 18 V gate-source voltage, contributing to improved efficiency. Key characteristics include a gate charge (Qg) of 288 nC at 15 V and an input capacitance (Ciss) of 9335 pF at 800 V. Operating across a wide temperature range from -55°C to 175°C, this device is housed in a TO-247-4 package suitable for through-hole mounting. Its robust SiCFET technology makes it well-suited for use in power conversion systems, electric vehicle charging, industrial motor drives, and renewable energy applications.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 157A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 100A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 567W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 50mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 288 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9335 pF @ 800 V |
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