G3R160MT17D
SIC MOSFET N-CH 21A TO247-3Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The GeneSiC Semiconductor G3R™ series G3R160MT17D is a Silicon Carbide (SiC) N-Channel MOSFET. This through-hole component features a Drain-Source Voltage (Vdss) of 1700V and a continuous drain current (Id) of 21A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 208mOhm at 12A and 15V gate-source voltage. With a maximum power dissipation of 175W (Tc), it operates across a temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 51 nC at 15V and input capacitance (Ciss) of 1272 pF at 1000V. Its TO-247-3 package is suitable for applications in power conversion, electric vehicles, and industrial motor drives.
Additional Information
Series: G3R™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 208mOhm @ 12A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 5mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1272 pF @ 1000 V |
Request a Quote
Clients Also Buy
G3R450MT17D
SIC MOSFET N-CH 9A TO247-3
G3R160MT12D
SIC MOSFET N-CH 22A TO247-3
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
